The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7869299 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 11, 2011

Filed:

Oct. 28, 2008
Applicants:

Koichiro Hayashi, Tokyo, JP;

Hitoshi Tanaka, Tokyo, JP;

Inventors:

Koichiro Hayashi, Tokyo, JP;

Hitoshi Tanaka, Tokyo, JP;

Assignee:

Elpida Memory, Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An internal-voltage generating circuit includes a plurality of generating units connected in cascade, out of the plurality of generating units, a generating unit of relatively lower level is activated by an output of a generating unit of relatively higher level. According to the present invention, because the plural voltage generating units are connected in cascade, the voltage generating unit of lower level is not activated unless the voltage generating unit of higher level is activated. Therefore, at least the voltage generating unit of the second level and the subsequent voltage generating units consume very small power during the standby time. Consequently, total power consumption of the internal-voltage generating circuit can be reduced.


Find Patent Forward Citations

Hayashi, Koichiro. (2011). Internal-voltage generating circuit and semiconductor device including the same (U.S. Patent No. 7869299). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7869299

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