The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Jul. 30, 2008
Dmitriy Shneyder, Hopewell Junction, NY (US);
Raschid J. Bezama, Putnam Valley, NY (US);
Dario L. Goldfarb, Mohegan Lake, NY (US);
Kafal Lai, Poughkeepsie, NY (US);
Dmitriy Shneyder, Hopewell Junction, NY (US);
Raschid J. Bezama, Putnam Valley, NY (US);
Dario L. Goldfarb, Mohegan Lake, NY (US);
Kafal Lai, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for reducing contamination in immersion lithography includes retaining a semiconductor wafer on a support surface of a wafer chuck, the wafer chuck having a gap therein, the gap located adjacent an outer edge of the wafer, and the gap containing a volume of immersion lithography fluid therein; and providing a fluid circulation path within the wafer chuck so as to facilitate the radial outward movement of the immersion lithography fluid in the gap, thereby maintaining a meniscus of the immersion lithography fluid at a selected height with respect to a top surface of the semiconductor wafer.