The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Oct. 29, 2007
Shin-bin Huang, Hsinchu County, TW;
Ching-nan Hsiao, Kaohsiung County, TW;
Chung-lin Huang, Tao-Yuan, TW;
Shin-Bin Huang, Hsinchu County, TW;
Ching-Nan Hsiao, Kaohsiung County, TW;
Chung-Lin Huang, Tao-Yuan, TW;
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Abstract
A flash memory is provided. The flash memory features of having the select gate transistors to include two different channel structures, which are a recessed channel structure and a horizontal channel. Because of the design of the recessed channel structure, the space between the gate conductor lines, which are for interconnecting the select gates of the select gate transistors arranged on the same column, can be shortened. Therefore, the integration of the flash memory can be increased; and the process window of the STI process can be increased as well. In addition, at least one depletion-mode select gate transistor is at one side of the memory cell string. The select gate transistor of the depletion-mode is always turned on.