The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Feb. 18, 2009
Wilfried Von Ammon, Hochburg, AT;
Wilfried von Ammon, Hochburg, AT;
Siltronic AG, Munich, DE;
Abstract
Semiconductor wafer of monocrystalline silicon contain fluorine, the fluorine concentration being 1·10to 1·10atoms/cm, and is free of agglomerated intrinsic point defects whose diameter is greater than or equal to a critical diameter. The semiconductor wafers are produced by providing a melt of silicon which is doped with fluorine, and crystallizing the melt to form a single crystal which contains fluorine within the range of 1·10to 1·10atoms/cm, at a growth rate at which agglomerated intrinsic point defects having a critical diameter or larger would arise if fluorine were not present or present in too small an amount, and separating semiconductor wafers from the single crystal.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile