The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Feb. 27, 2008
Jong-wan Choi, Gyeonggi-do, KR;
Eun-kyung Baek, Gyeonggi-do, KR;
Sang-hoon Ahn, Gyeonggi-do, KR;
Hong-gun Kim, Gyeonggi-do, KR;
Dong-chul Suh, Gyeonggi-do, KR;
Yong-soon Choi, Gyeonggi-do, KR;
Jong-wan Choi, Gyeonggi-do, KR;
Eun-kyung Baek, Gyeonggi-do, KR;
Sang-hoon Ahn, Gyeonggi-do, KR;
Hong-gun Kim, Gyeonggi-do, KR;
Dong-chul Suh, Gyeonggi-do, KR;
Yong-soon Choi, Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device includes forming a lower device on a lower semiconductor substrate, and forming an interlayer insulating film on the lower device. An upper semiconductor substrate is formed on the interlayer insulating film such that the interlayer insulating film is between the lower and upper semiconductor substrates. Upper trenches are formed within the upper semiconductor substrate. An upper device isolating film is formed within the upper trenches. The upper device isolating film is irradiated with ultraviolet light having a wavelength configured to break chemical bonds of impurities in the upper device isolating film to reduce an impurity concentration thereof.