The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2011

Filed:

Sep. 04, 2008
Applicants:

Anchuan Wang, Sunnyvale, CA (US);

Young S. Lee, San Jose, CA (US);

Manoj Vellaikal, Sunnyvale, CA (US);

Jason Thomas Bloking, Mountain View, CA (US);

Jin Ho Jeon, San Ramon, CA (US);

Hemant P. Mungekar, Campbell, CA (US);

Inventors:

Anchuan Wang, Sunnyvale, CA (US);

Young S. Lee, San Jose, CA (US);

Manoj Vellaikal, Sunnyvale, CA (US);

Jason Thomas Bloking, Mountain View, CA (US);

Jin Ho Jeon, San Ramon, CA (US);

Hemant P. Mungekar, Campbell, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract

A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 Å is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.


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