The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Jun. 10, 2008
Carmelo F. Scrudato, Ossining, NY (US);
George Y. Gu, Burlington, MA (US);
Loren L. Hahn, Cedar Creek, TX (US);
Steven B. Herschbein, Hopewell Junction, NY (US);
Carmelo F. Scrudato, Ossining, NY (US);
George Y. Gu, Burlington, MA (US);
Loren L. Hahn, Cedar Creek, TX (US);
Steven B. Herschbein, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The invention generally relates to semiconductor device processing, and more particularly to methods of accessing semiconductor circuits from the backside using ion-beam and gas-etch to mill deep vias through full-thickness silicon. A method includes creating a pocket in a material to be etched, and performing an isotropic etch of the material by flowing a reactive gas into the pocket and directing a focused ion beam into the pocket.