The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Jun. 26, 2008
Chang-hyun Lee, Gyeonggi-do, KR;
Jung-dal Choi, Gyeonggi-do, KR;
Chang-seok Kang, Gyeonggi-do, KR;
Jin-taek Park, Gyeonggi-do, KR;
Byeong-in Choe, Gyeonggi-do, KR;
Chang-Hyun Lee, Gyeonggi-do, KR;
Jung-Dal Choi, Gyeonggi-do, KR;
Chang-Seok Kang, Gyeonggi-do, KR;
Jin-Taek Park, Gyeonggi-do, KR;
Byeong-In Choe, Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device includes forming a fin-shaped active region including opposing sidewalls and a surface therebetween protruding from a substrate, forming a gate structure on the surface of the active region, and performing an ion implantation process to form source/drain regions in the active region at opposite sides of the gate structure. The source/drain regions respectively include a first impurity region in the surface of the active region and second impurity regions in the opposing sidewalls of the active region. The first impurity region has a doping concentration that is greater than that of the second impurity regions. Related devices are also discussed.