The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Jul. 13, 2006
Richard W. Foote, Kennedale, TX (US);
Terry Lee Lines, Mansfield, TX (US);
Alexei Sadovnikov, Sunnyvale, CA (US);
Andy Strachan, Santa Clara, CA (US);
Richard W. Foote, Kennedale, TX (US);
Terry Lee Lines, Mansfield, TX (US);
Alexei Sadovnikov, Sunnyvale, CA (US);
Andy Strachan, Santa Clara, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
An efficient method is disclosed for increasing the breakdown voltage of an integrated circuit device that is isolated by a local oxidation of silicon (LOCOS) process. The method comprises forming a portion of a field oxide in an integrated circuit so that the field oxide has a gradual profile. The gradual profile of the field oxide reduces impact ionization in the field oxide by creating a reduced value of electric field for a given value of applied voltage. The reduction in impact ionization increases the breakdown voltage of the integrated circuit. The gradual profile is formed by using an increased thickness of pad oxide and a reduced thickness of silicon nitride during a field oxide oxidation process.