The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Dec. 18, 2008
Teruyuki Mine, Tokyo, JP;
Teruyuki Mine, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
There are provided a method of manufacturing a semiconductor device which is capable of narrowing only the width of a Fin channel while maintaining the widths of source and drain regions, and a semiconductor device. The method of manufacturing a semiconductor device is a method of manufacturing a Fin type transistor, including: forming STI regionwith use of mask layerformed over silicon substrateas a mask; narrowing mask layerby wet etching to form narrowed mask layer; forming stopper oxide filmover a surface of narrowed mask layer, depositing polysiliconover an entire surface and then forming anti-reflective filmand photoresist; forming an opening at photoresistin a portion corresponding to a word line portion, removing anti-reflective filmand polysiliconin that portion to expose narrowed mask layerand then removing photoresist; and forming Fin channelby etching portions of silicon substratewhich lie on opposite sides of and below narrowed mask layerwith narrowed mask layeras a mask.