The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2011

Filed:

Jul. 05, 2005
Applicants:

Masami Yakabe, Tokyo, JP;

Kenichi Kagawa, Kawasaki, JP;

Tomohisa Hoshino, Amagasaki, JP;

Inventors:

Masami Yakabe, Tokyo, JP;

Kenichi Kagawa, Kawasaki, JP;

Tomohisa Hoshino, Amagasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01K 3/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

A through substrate which comprises a silicon substrate () having a through hole () penetrating a front surface () and a back surface (), a oxidized silicon film () being provided along the inner wall surface of the through hole (), layers () comprising Zn and Cu, respectively, being formed on the inner wall surface of the oxidized silicon film (), and a Cu plating layer () which has been grown from a Cu seed layer () along the inner wall surface of layers () comprising Zn and Cu, respectively, via an insulating layer () between them. The above through substrate can provide a through electrode capable of avoiding the noise due to the cross talk.


Find Patent Forward Citations

Loading…