The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2011

Filed:

May. 05, 2009
Applicants:

Ryohei Furuya, Tokyo, JP;

Yoji Idei, Tokyo, JP;

Inventors:

Ryohei Furuya, Tokyo, JP;

Yoji Idei, Tokyo, JP;

Assignee:

Elpida Memory, Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 1/563 (2006.01); H02M 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A device includes an N-channel transistor for output, a voltage raising circuit, a voltage dropping circuit, and an amplifier. A power supply voltage that is a first voltage is supplied to one end of the output N-channel transistor, and the other end of the output N-channel transistor functions as an output terminal. The voltage raising circuit raises the first voltage to generate a second voltage higher than the first voltage. The voltage dropping circuit reduces the second voltage to generate a third voltage that is higher than the first voltage and is lower than the second voltage. The amplifier amplifies the difference between a reference voltage and a voltage generated at the output terminal, using the third voltage as a power supply voltage, to generate a fourth voltage, and supplies the fourth voltage to the gate of the N-channel transistor for output.


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