The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Jan. 09, 2006
Huajie Chen, Danbury, CT (US);
Dureseti Chidambarrao, Weston, CT (US);
Judson R. Holt, Wappingers Falls, NY (US);
Qiqing C. Ouyang, Yorktown Heights, NY (US);
Siddhartha Panda, Beacon, NY (US);
Huajie Chen, Danbury, CT (US);
Dureseti Chidambarrao, Weston, CT (US);
Judson R. Holt, Wappingers Falls, NY (US);
Qiqing C. Ouyang, Yorktown Heights, NY (US);
Siddhartha Panda, Beacon, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for fabricating the semiconductor structure include a semiconductor substrate having a cross-section hourglass shaped channel region. A stress imparting layer is located adjacent the channel region. The hourglass shape may provide for enhanced vertical tensile stress within the channel region when it is longitudinally compressive stressed by the stress imparting layer.