The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Jan. 05, 2007
Veeraraghaven S. Basker, Albany, NY (US);
John Michael Cotte, New Fairfield, CT (US);
Hariklia Deligianni, Tenafly, NJ (US);
John Ulrich Knickerbocker, Monroe, NY (US);
Keith T. Kwietniak, Highland Falls, NY (US);
Veeraraghaven S. Basker, Albany, NY (US);
John Michael Cotte, New Fairfield, CT (US);
Hariklia Deligianni, Tenafly, NJ (US);
John Ulrich Knickerbocker, Monroe, NY (US);
Keith T. Kwietniak, Highland Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods are provided for fabricating silicon carriers with conductive through-vias that allow high-yield manufacture of silicon carrier with low defect density. In particular, methods are provided which enable fabrication of silicon carries with via diameters such as 1 to 10 microns in diameter for a vertical thickness of less than 10 micrometers to greater than 300 micrometers, which are capable robust to thermal-mechanical stresses during production to significantly minimize the thermal mechanical movement at the via sidewall interface between the silicon, insulator, liner and conductor materials.