The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Dec. 13, 2006
Jan Hoentschel, Sachsen, DE;
Andy Wei, Dresden, DE;
Joe Bloomquist, Dresden, DE;
Manfred Horstmann, Duerroehrsdorf-Dittersbach, DE;
Jan Hoentschel, Sachsen, DE;
Andy Wei, Dresden, DE;
Joe Bloomquist, Dresden, DE;
Manfred Horstmann, Duerroehrsdorf-Dittersbach, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
By introducing a atomic species, such as carbon, fluorine and the like, into the drain and source regions, as well as in the body region, the junction leakage of SOI transistors may be significantly increased, thereby providing an enhanced leakage path for accumulated minority charge carriers. Consequently, fluctuations of the body potential may be significantly reduced, thereby improving the overall performance of advanced SOI devices. In particular embodiments, the mechanism may be selectively applied to threshold voltage sensitive device areas, such as static RAM areas.