The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Feb. 26, 2008
Applicants:
Seung-hwan Lee, Suwon-si, KR;
Heon-jong Shin, Yongin-si, KR;
Shigenobu Maeda, Seongnam-si, KR;
Sung-rey WI, Suwon-si, KR;
Quan Wangxiao, Yongin-si, KR;
Hyun-min Choi, Anyang-si, KR;
Inventors:
Seung-hwan Lee, Suwon-si, KR;
Heon-jong Shin, Yongin-si, KR;
Shigenobu Maeda, Seongnam-si, KR;
Sung-rey Wi, Suwon-si, KR;
Quan WangXiao, Yongin-si, KR;
Hyun-min Choi, Anyang-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device with a strain layer and a method of fabricating the semiconductor device with a strain layer that can reduce a loading effect are provided. By arranging active dummies and gate dummies not to overlap each other, the area of active dummy on which a strain layer dummy will be formed can be secured, thereby reducing the loading effect.