The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Nov. 29, 2008
Applicant:
Yeo-hwang Kim, Gwanak-gu, KR;
Inventor:
Yeo-Hwang Kim, Gwanak-gu, KR;
Assignee:
Dongbu HiTek Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of measuring on-resistance in a backside drain wafer includes providing a wafer having a first MOS transistor and a second MOS transistor each having a source and also sharing a drain provided at a backside of the wafer, and then forming a current flow path passing through the first and second MOS transistors, and then measuring a resistance between the sources of the first and second MOS transistors. Accordingly, an on-resistance in a backside drain wafer can be measured without using a chuck.