The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Aug. 08, 2008
Applicants:
Takeyoshi Nishimura, Matsumoto, JP;
Takashi Kobayashi, Matsumoto, JP;
Yasushi Niimura, Matsumoto, JP;
Tadanori Yamada, Matsumoto, JP;
Inventors:
Takeyoshi Nishimura, Matsumoto, JP;
Takashi Kobayashi, Matsumoto, JP;
Yasushi Niimura, Matsumoto, JP;
Tadanori Yamada, Matsumoto, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H03K 17/74 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device is provided with Zener diodes which are formed by using a polysilicon gate layer(s) so as to be connected to each other in parallel. Parallel-connected rectangular Zener diodes are formed outside an active region or parallel-connected striped Zener diodes are formed inside the active region. The Zener diodes increase the ESD capability of the semiconductor device.