The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
Jul. 22, 2008
Tomohide Terashima, Tokyo, JP;
Tomohide Terashima, Tokyo, JP;
Mitsubushi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor layer provided on a BOX (buried oxide) layer includes a first P-type region, an N-type region, and an N-type region which together form a diode. A plurality of second P-type regions are provided on a bottom part of the semiconductor layer. A plurality of insulating oxide films are interposed between the plurality of second P-type regions. When the diode is in a reverse-biased state, the second P-type region directly below the N-type region is approximately the same in potential as the N-type region. The second P-type region will be lower in potential relative to this second P-type region directly below the N-type region, as the second P-type region gets nearer to the first P-type region. Electric field concentration can thus be relaxed at an interface between the semiconductor layer and the BOX layer, whereby improvement in breakdown voltage of the diode is realized.