The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
Jul. 12, 2007
Tetsuya Yamaguchi, Tokyo, JP;
Hiroshige Goto, Yokohama, JP;
Hirofumi Yamashita, Kawasaki, JP;
Ikuko Inoue, Yokohama, JP;
Nagataka Tanaka, Yokohama, JP;
Hisanori Ihara, Yokkaichi, JP;
Tetsuya Yamaguchi, Tokyo, JP;
Hiroshige Goto, Yokohama, JP;
Hirofumi Yamashita, Kawasaki, JP;
Ikuko Inoue, Yokohama, JP;
Nagataka Tanaka, Yokohama, JP;
Hisanori Ihara, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
An n/p/psubstrate where a p-type epitaxial layer and an n-type epitaxial layer have been deposited on a p-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p-type epitaxial layer from the substrate surface.