The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 21, 2010

Filed:

Aug. 28, 2007
Applicants:

Scott T. Sheppard, Chapel Hill, NC (US);

Richard P. Smith, Carrboro, NC (US);

Zoltan Ring, Chapel Hill, NC (US);

Inventors:

Scott T. Sheppard, Chapel Hill, NC (US);

Richard P. Smith, Carrboro, NC (US);

Zoltan Ring, Chapel Hill, NC (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

An improved field effect transistor formed in the Group III nitride material system includes a two part structure in which a chemical vapor deposited passivation layer of silicon nitride encapsulates a previously sputtered-deposited layer of silicon nitride. The sputtered layer provides some of the benefits of passivation and the chemical vapor deposited layer provides an excellent environmental barrier.


Find Patent Forward Citations

Sheppard, Scott. (2010). Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides (U.S. Patent No. 7855401). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7855401

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…