The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
Jul. 19, 2007
Je-min Park, Gyeonggi-do, KR;
Yoo-sang Hwang, Gyeonggi-do, KR;
Je-Min Park, Gyeonggi-do, KR;
Yoo-Sang Hwang, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Methods of forming an integrated circuit device may include forming an insulating layer on an integrated circuit substrate, forming a first conductive layer on the insulating layer, and forming a second conductive layer on the first conductive layer so that the first conductive layer is between the second conductive layer and the insulating layer. Moreover, the first conductive layer may be a layer of a first material, the second conductive layer may be a layer of a second material, and the first and second materials may be different. A hole may be formed in the second conductive layer so that portions of the first conductive layer are exposed through the hole. After forming the hole in the second conductive layer, the first and second conductive layers may be patterned so that portions of the first and second conductive layers surrounding portions of the first conductive layer exposed through the hole are removed while maintaining portions of the first conductive layer previously exposed through the hole.