The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2010

Filed:

Jun. 04, 2008
Applicants:

Bun Kobayashi, Cypress, CA (US);

Liyang Zhang, West Hills, CA (US);

Mau-chung Frank Chang, Los Angeles, CA (US);

Pei-ming Daniel Chow, Los Angeles, CA (US);

Inventors:

Bun Kobayashi, Cypress, CA (US);

Liyang Zhang, West Hills, CA (US);

Mau-Chung Frank Chang, Los Angeles, CA (US);

Pei-Ming Daniel Chow, Los Angeles, CA (US);

Assignee:

Silicon Storage Technology, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 5/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

An amplifier circuit comprises a detection power input circuit for receiving an RF signal, and a bias circuit that includes an output for generating a bias signal in response to a reference control voltage. The power detector further comprises a detection circuit for generating a power control voltage having a voltage characteristic that offsets temperature characteristics of the received RF signal. The amplifier circuit further comprises a power amplifier coupled to the bias circuit. The power amplifier includes a driver stage providing the RF signal. The detection circuit compensates temperature variation of the inputted detection voltage of the received RF signal.


Find Patent Forward Citations

Loading…