The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Jul. 18, 2008
Kyung-bae Park, Seoul, KR;
Seon-mi Yoon, Yongin-si, KR;
Sang-yoon Lee, Seoul, KR;
Jae-young Choi, Suwon-si, KR;
Hyeon-jin Shin, Suwon-si, KR;
Myung-kwan Ryu, Yongin-si, KR;
Tae-sang Kim, Seoul, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Kyung-seok Son, Seoul, KR;
Ji-sim Jung, Incheon, KR;
Kyung-bae Park, Seoul, KR;
Seon-mi Yoon, Yongin-si, KR;
Sang-yoon Lee, Seoul, KR;
Jae-young Choi, Suwon-si, KR;
Hyeon-jin Shin, Suwon-si, KR;
Myung-kwan Ryu, Yongin-si, KR;
Tae-sang Kim, Seoul, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Kyung-seok Son, Seoul, KR;
Ji-sim Jung, Incheon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Example embodiments relate to a poly-crystalline silicon (Si) thin film, a thin film transistor (TFT) formed from a poly-crystalline silicon (Si) thin film and methods of manufacturing the same. The method of manufacturing the poly-crystalline Si thin film includes forming an active layer formed of amorphous Si on a substrate, coating a gold nanorod on the active layer, and irradiating infrared rays onto the gold nanorod to crystallize the active layer.