The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Apr. 27, 2007
Nicole Herbots, Tempe, AZ (US);
James Bradley, Mesa, AZ (US);
Justin Maurice Shaw, Boulder, CO (US);
Robert J. Culbertson, Tempe, AZ (US);
Vasudeva Atluri, Scottsdale, AZ (US);
Nicole Herbots, Tempe, AZ (US);
James Bradley, Mesa, AZ (US);
Justin Maurice Shaw, Boulder, CO (US);
Robert J. Culbertson, Tempe, AZ (US);
Vasudeva Atluri, Scottsdale, AZ (US);
Abstract
The invention provides novel methods for preparing semiconductor substrates for the growth of an ultra-thin epitaxial interfacial phase thereon. The invention additionally provides the ultra-thin epitaxial interfacial phase formed on a semiconductor substrate prepared by the methods of the invention. Epitaxiality of the interfacial phase is ensured by maintaining the cleaned semiconductor substrate in a static and inert atmosphere prior to oxidation to form the interfacial phase. Such interfacial phase are useful as capping layers and dielectric layers for semiconductor devices.