The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Jun. 13, 2008
Yoshiyuki Kikuchi, Nirasaki, JP;
Yoshiyuki Kikuchi, Nirasaki, JP;
Tokyo Electron Limited, Minato-ku, JP;
Abstract
A method for manufacturing semiconductor devices includes the steps of; forming an insulating film comprising a fluorine added carbon film on a substrate; forming a first barrier layer comprising a silicon nitride film on the insulating film by exposing a surface of the substrate formed with the insulating film to a plasma containing each active specie of a silicon and a nitride; forming a second barrier layer comprising a film containing silicon, carbon, and nitride on the first barrier layer by exposing a surface of the substrate formed with the first barrier layer to a plasma containing each active specie of the silicon and a carbon; and forming a film containing silicon and oxygen on the second barrier layer by exposing a surface of the substrate formed with the second barrier layer to a plasma containing each active specie of the silicon and an oxygen.