The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Sep. 26, 2006
Walter Rieger, Arnoldstein, AT;
Paul Ganitzer, Villach, AT;
Oliver Haeberlen, Villach, AT;
Franz Hirler, Isen, DE;
Markus Zundel, Egmating, DE;
Rudolf Zelsacher, Klagenfurt, AT;
Erwin Bacher, Villach, AT;
Walter Rieger, Arnoldstein, AT;
Paul Ganitzer, Villach, AT;
Oliver Haeberlen, Villach, AT;
Franz Hirler, Isen, DE;
Markus Zundel, Egmating, DE;
Rudolf Zelsacher, Klagenfurt, AT;
Erwin Bacher, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A method for producing a connection electrode for a first semiconductor zone and a second semiconductor zone includes producing a trench extending through the first semiconductor zone right into the second semiconductor zone in such a way that the first semiconductor zone is uncovered at sidewalls of the trench and the second semiconductor zone is uncovered at least at a bottom of the trench. The method also includes applying a protective layer to a first one of the first and second semiconductor zones in the trench, and producing a first connection zone in the second of the two semiconductor zones, which is not covered by the protective layer. The method further includes depositing an electrode layer at least onto the sidewalls and the bottom of the trench for the purpose of producing the connection electrode.