The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Jan. 08, 2009
Chang-han Choi, Gyeonggi-do, KR;
Ho-keun Cho, Gyeonggi-do, KR;
Byung-gil Choi, Gyeonggi-do, KR;
Ki-sung Kim, Seoul, KR;
Jong-chul Park, Seoul, KR;
Jong-soo Seo, Gyeonggi-do, KR;
Chang-han Choi, Gyeonggi-do, KR;
Ho-keun Cho, Gyeonggi-do, KR;
Byung-gil Choi, Gyeonggi-do, KR;
Ki-sung Kim, Seoul, KR;
Jong-chul Park, Seoul, KR;
Jong-soo Seo, Gyeonggi-do, KR;
Abstract
A phase-change random access memory (PRAM) device includes a plurality of banks, a plurality of column redundancy cell arrays, and a plurality of column redundancy write drivers. Each of the plurality of column redundancy cell arrays corresponds to at least one of the banks. Each of the plurality of column redundancy write drivers corresponds to at least one of the column redundancy cell arrays. The column redundancy write drivers are configured to transmit respective redundancy test data to the corresponding ones of the column redundancy cell arrays in response to a test control signal, which may be activated in response to each program pulse for writing data. Related test and access methods are also discussed.