The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Sep. 18, 2008
Yizhang Yang, Sunnyvale, CA (US);
Haiwen Xi, Prior Lake, MN (US);
Yiming Shi, Maple Grove, MN (US);
Kaizhong Gao, Eden Prairie, MN (US);
Jun Ouyang, Bloomington, MN (US);
Song S. Xue, Edina, MN (US);
Yizhang Yang, Sunnyvale, CA (US);
Haiwen Xi, Prior Lake, MN (US);
Yiming Shi, Maple Grove, MN (US);
Kaizhong Gao, Eden Prairie, MN (US);
Jun Ouyang, Bloomington, MN (US);
Song S. Xue, Edina, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.