The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Sep. 19, 2008
Bruce G. Elmegreen, Goldens Bridge, NY (US);
Lia Krusin-elbaum, Dobbs Ferry, NY (US);
Xiao HU Liu, Briarcliff Manor, NY (US);
Glenn J. Martyna, Pleasantville, NY (US);
Martin Muser, London, CA;
Dennis M. Newns, Yorktown Heights, NY (US);
Bruce G. Elmegreen, Goldens Bridge, NY (US);
Lia Krusin-Elbaum, Dobbs Ferry, NY (US);
Xiao Hu Liu, Briarcliff Manor, NY (US);
Glenn J. Martyna, Pleasantville, NY (US);
Martin Muser, London, CA;
Dennis M. Newns, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A piezoelectrically programmed, non-volatile memory cell structure includes a programmable piezo-resistive hysteretic material (PRHM) that is capable of being interconverted between a low resistance state and high resistance state through applied pressure cycling thereto; a piezoelectric material mechanically coupled to the PRHM such that an applied voltage across the piezoelectric material results in one of a tensile or compressive stress applied to the PRHM, depending upon the polarity of the applied voltage; and one or more electrodes in electrical communication with the PRHM, wherein the one or more electrodes are configured to provide a write programming current path through the piezoelectric material and a read current path through the PRHM.