The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Mar. 18, 2008
Applicants:
Satoshi Nitta, Kameoka, JP;
Yoshihiro Osawa, Moriyama, JP;
Inventors:
Satoshi Nitta, Kameoka, JP;
Yoshihiro Osawa, Moriyama, JP;
Assignee:
Otsuka Electronics Co., Ltd., Osaka, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 3/42 (2006.01);
U.S. Cl.
CPC ...
Abstract
An FTIR measurement is conducted on a background gas to obtain a single beam spectrum SB(BG) [C] and a synthetic single beam spectrum SSB(BG)[D], and an FTIR measurement is conducted on a sample gas to obtain a single beam spectrum SB(Samp)[E] and a synthetic single beam spectrum SSB(Samp)[F]. A double synthetic absorbance spectrum DSAbs of the sample gas as expressed by the following formula (Step T9) is calculated to obtain a concentration of a trace component (impurity) contained in the sample gas:DSAbs =−log[SB(Samp) SSB(BG)/SSB(Samp) SB(BG)]