The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Jan. 27, 2005
Dun-nian Yaung, Taipei, TW;
Kuo-ching Huang, Hsin Chu, TW;
Ho-ching Chien, Hsinchu County, TW;
Shou-gwo Wuu, Hsin-Chu, TW;
Dun-Nian Yaung, Taipei, TW;
Kuo-Ching Huang, Hsin Chu, TW;
Ho-Ching Chien, Hsinchu County, TW;
Shou-Gwo Wuu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A CMOS image sensor having increased capacitance that allows a photo-diode to generate a larger current is provided. The increased capacitance reduces noise and the dark signal. The image sensor utilizes a transistor having nitride spacers formed on a buffer oxide layer. Additional capacitance may be provided by various capacitor structures, such as a stacked capacitor, a planar capacitor, a trench capacitor, a MOS capacitor, a MIM/PIP capacitor, or the like. Embodiments of the present invention may be utilized in a 4-transistor pixel or a 3-transistor pixel configuration.