The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Dec. 31, 2002
Applicants:
Timothy J. Maloney, Palo Alto, CA (US);
Steven S. Poon, Santa Clara, CA (US);
Inventors:
Timothy J. Maloney, Palo Alto, CA (US);
Steven S. Poon, Santa Clara, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 31/111 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 23/62 (2006.01); H01L 29/00 (2006.01); H01L 25/00 (2006.01); H02M 7/162 (2006.01);
U.S. Cl.
CPC ...
Abstract
A reduced capacitance diode. A first conductive layer provides conductive interconnects for pad and supply diffusion regions in a diode. A second conductive layer includes a first portion to couple the pad diffusion regions to a pad and a second portion to couple the supply diffusion regions to a voltage supply. Lines of the first and second conductive layers are substantially parallel to each other in a diode region of the diode. Further, for one aspect, a tap for the diode to be coupled to a supply is wider than a minimum width.