The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Jan. 20, 2009
Jeffrey N Miller, Los Altos Hills, CA (US);
David P Bour, Cupertino, CA (US);
Virginia M Robbins, Los Gatos, CA (US);
Steven D Lester, Palo Alto, CA (US);
Jeffrey N Miller, Los Altos Hills, CA (US);
David P Bour, Cupertino, CA (US);
Virginia M Robbins, Los Gatos, CA (US);
Steven D Lester, Palo Alto, CA (US);
Avago Technologies ECBU IP (Singapore) Pte. Ltd., Singapore, SG;
Abstract
An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.