The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2010

Filed:

Mar. 18, 2008
Applicants:

Keyvan Kashefizadeh, Dublin, CA (US);

Zhigang Xie, Sunnyvale, CA (US);

Ashish S. Bodke, San Jose, CA (US);

Mei Chang, Saratoga, CA (US);

Inventors:

Keyvan Kashefizadeh, Dublin, CA (US);

Zhigang Xie, Sunnyvale, CA (US);

Ashish S. Bodke, San Jose, CA (US);

Mei Chang, Saratoga, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for forming titanium nitride layers are provided herein. In some embodiments, a method of forming a titanium nitride layer on a substrate may include providing a substrate into a processing chamber having a target comprising titanium disposed therein; supplying a nitrogen-containing gas into the processing chamber; sputtering a titanium source material from the target in the presence of a plasma formed from the nitrogen-containing gas to deposit a titanium nitride layer on the substrate; and upon depositing the titanium nitride layer to a desired thickness, forming a magnetic field that biases ions in the processing chamber away from the substrate.


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