The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Oct. 16, 2007
Applicants:
Sameer P. Pendharkar, Allen, TX (US);
John Lin, Chelmsford, MA (US);
Philip L. Hower, Concord, MA (US);
Steven L. Merchant, Amherst, NH (US);
Inventors:
Sameer P. Pendharkar, Allen, TX (US);
John Lin, Chelmsford, MA (US);
Philip L. Hower, Concord, MA (US);
Steven L. Merchant, Amherst, NH (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device comprising a first transistor device on or in a semiconductor substrate and a second transistor device on or in the substrate. The device further comprises an insulating trench located between the first transistor device and the second transistor device. At least one upper corner of the insulating trench is a rounded corner in a lateral plane of the substrate.