The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Mar. 01, 2005
Pei Cheh Chen, Campbell, CA (US);
Omar Eduardo Montero Camacho, Jalisco, MX;
Laurence Scott Samuelson, San Jose, CA (US);
Yongjian Sun, San Jose, CA (US);
Pei Cheh Chen, Campbell, CA (US);
Omar Eduardo Montero Camacho, Jalisco, MX;
Laurence Scott Samuelson, San Jose, CA (US);
Yongjian Sun, San Jose, CA (US);
Hitachi Global Storage Technologies, Netherlands, B.V., Amsterdam, NL;
Abstract
A method for increasing etch depth uniformity in ion milling process in a wafer manufacturing process encompasses loading designated regions of a production pallet with carriers containing wafers to be ion milled. These designated regions have been predetermined to exhibit similar and preferred depths of etching. Non-designated regions of the production pallet are then loaded with dummy carriers and the wafers are ion milled.