The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Sep. 18, 2008
Richard K. Chou, Palo Alto, CA (US);
Damodar R. Thummalapally, Milpitas, CA (US);
Richard K. Chou, Palo Alto, CA (US);
Damodar R. Thummalapally, Milpitas, CA (US);
SuVolta, Inc., Los Gatos, CA (US);
Abstract
A memory device including a static random access memory (SRAM) cell comprising junction field effect transistors (JFETs) has been disclosed. The memory cell includes a first bipolar junction transistor (BJT) for driving a bit line at logic levels having a potential outside the potential range in which the SRAM cell operates. An amplifier including a level translator circuit provides a level shifting operation on the data provided by the bit line to provide level shifted data having a voltage swing within the potential range in which the SRAM cell operates. The level translator circuit includes a second BJT. In this way, fast read operation of a SRAM cell comprising JFETs may be provided.