The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Sep. 04, 2007
Wei-ling Lin, I-Lan Hsien, TW;
Jiing-fa Wen, Taipei, TW;
Wen-hsi Lee, Kaohsiung, TW;
Tarng-shiang HU, Hsinchu, TW;
Jiun-jie Wang, Kaohsiung, TW;
Cheng-chung Lee, Hsinchu, TW;
Wei-Ling Lin, I-Lan Hsien, TW;
Jiing-Fa Wen, Taipei, TW;
Wen-Hsi Lee, Kaohsiung, TW;
Tarng-Shiang Hu, Hsinchu, TW;
Jiun-Jie Wang, Kaohsiung, TW;
Cheng-Chung Lee, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers.