The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Oct. 12, 2007
Satoshi Takei, Toyama, JP;
Makoto Nakajima, Toyama, JP;
Yasushi Sakaida, Toyama, JP;
Hikaru Imamura, Toyama, JP;
Keisuke Hashimoto, Toyama, JP;
Takahiro Kishioka, Toyama, JP;
Satoshi Takei, Toyama, JP;
Makoto Nakajima, Toyama, JP;
Yasushi Sakaida, Toyama, JP;
Hikaru Imamura, Toyama, JP;
Keisuke Hashimoto, Toyama, JP;
Takahiro Kishioka, Toyama, JP;
Nissan Chemical Industries, Ltd., Tokyo, JP;
Abstract
There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).