The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Nov. 18, 2005
Applicant:
Tetsuya Nishizuka, Amagasaki, JP;
Inventor:
Tetsuya Nishizuka, Amagasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention is an etching method for performing an etching process in the presence of a plasma on an object to be processed in which a layer to be etched made of a tungsten-containing material is formed on a base layer made of a silicon-containing material in a process vessel capable of being evacuated to create therein a vacuum, wherein a chlorine-containing gas, an oxygen-containing gas, and a nitrogen-containing gas are used as an etching gas for performing the etching process.
Nishizuka, Tetsuya. (2010). Etching method and etching apparatus (U.S. Patent No. 7842617). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7842617
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile