The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Nov. 28, 2005
Ki Hoon Lee, Yongin-si, KR;
Young Hoon Park, Anseong-si, KR;
Sahng Kyoo Lee, Seoul, KR;
Tae Wook Seo, Suwon-si, KR;
Ho Seung Chang, Seoul, KR;
Ki Hoon Lee, Yongin-si, KR;
Young Hoon Park, Anseong-si, KR;
Sahng Kyoo Lee, Seoul, KR;
Tae Wook Seo, Suwon-si, KR;
Ho Seung Chang, Seoul, KR;
Integrated Process Systems Ltd, Pyungtaek-si, KR;
Abstract
Disclosed herein are a method of depositing a thin film and a method of manufacturing a semiconductor using the same, having high selectivity by increasing etching resistance while an extinction coefficient associated with anti-reflectivity is maintained low. The method of depositing a thin film according to the invention includes (a) depositing an carbon anti-reflective film on the bottom film of a substrate; and (b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) to the surface or the inner portion of the carbon anti-reflective film, to deposit a thin film of a-C:N, a-C:F or a-C:Si, having high selectivity, to a thickness from 1 to 100 nm using an atomic layer deposition process. Therefore, an ultrathin film having etching resistance is formed on or in the carbon anti-reflective film and the density and compressive stress of the carbon anti-reflective film are increased, thus increasing etching selectivity.