The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2010

Filed:

Jan. 22, 2007
Applicants:

Haoren Zhuang, Hopewell Junction, NY (US);

Matthias Lipinski, Poughkeepsie, NY (US);

Jingyu Lian, Hopewell Junction, NY (US);

Chandrasekhar Sarma, Poughkeepsie, NY (US);

Inventors:

Haoren Zhuang, Hopewell Junction, NY (US);

Matthias Lipinski, Poughkeepsie, NY (US);

Jingyu Lian, Hopewell Junction, NY (US);

Chandrasekhar Sarma, Poughkeepsie, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract

Various illustrative embodiments of methods for manufacturing a semiconductor device are described. These methods may include, for example, forming a first polysilicon layer above a substrate, wherein the first polysilicon layer comprises a doped portion, and forming a second polysilicon layer over a surface of the first polysilicon layer. Also, various illustrative embodiments of semiconductor devices are described that may be manufactured such as by the various methods described herein.


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