The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Jan. 18, 2007
Applicant:
Hiroyuki Oguri, Yamanashi, JP;
Inventor:
Hiroyuki Oguri, Yamanashi, JP;
Assignee:
Eudyna Devices Inc., Nakakoma-Gun, Yamanashi, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/318 (2006.01); H01L 33/46 (2006.01);
U.S. Cl.
CPC ...
Abstract
A fabrication method of a semiconductor device includes forming a silicon nitride layer on a compound semiconductor layer with a plasma CVD method and selectively treating the compound semiconductor layer with use of the silicon nitride layer for a mask. The silicon nitride layer has a refraction index of less than 1.85. The compound semiconductor layer includes Ga.