The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2010

Filed:

Dec. 11, 2007
Applicants:

Michael D. Hillman, Los Altos, CA (US);

Gregory L. Tice, Los Altos, CA (US);

Oscar Woo, Santa Cruz, CA (US);

Amir Salehi, San Jose, CA (US);

Richard Lidio Blanco, Jr., Santa Clara, CA (US);

Ronald J. Smith, New Berlin, WI (US);

Sean A. Bailey, Menlo Park, CA (US);

Anwyl M. Mcdonald, Oakland, CA (US);

Clayton R. Anderson, El Cerrito, CA (US);

James M. Crowder, Greenwich, NY (US);

Jeffrey J. Van Norden, Clifton Park, NY (US);

Jonathan N. Urquhart, Saratoga Springs, NY (US);

Inventors:

Michael D. Hillman, Los Altos, CA (US);

Gregory L. Tice, Los Altos, CA (US);

Oscar Woo, Santa Cruz, CA (US);

Amir Salehi, San Jose, CA (US);

Richard Lidio Blanco, Jr., Santa Clara, CA (US);

Ronald J. Smith, New Berlin, WI (US);

Sean A. Bailey, Menlo Park, CA (US);

Anwyl M. McDonald, Oakland, CA (US);

Clayton R. Anderson, El Cerrito, CA (US);

James M. Crowder, Greenwich, NY (US);

Jeffrey J. Van Norden, Clifton Park, NY (US);

Jonathan N. Urquhart, Saratoga Springs, NY (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments of a method for applying a thermal-interface material are described. During this method, a first surface of a heat-removal device and a second surface of a semiconductor die are prepared. Next, a region on a given surface, which is at least one of the first surface and the second surface, is defined. Then, the thermal-interface material is applied to at least the region, where the thermal-interface material includes a material that is a liquid metal over a range of operating temperatures of the semiconductor die.


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