The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7838325 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 23, 2010

Filed:

Feb. 13, 2009
Applicants:

Tzu-hsuan Hsu, Kaohsiung, TW;

Alex Hsu, Hsinchu, TW;

Ching-chun Wang, Tainan, TW;

Inventors:

Tzu-Hsuan Hsu, Kaohsiung, TW;

Alex Hsu, Hsinchu, TW;

Ching-Chun Wang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.


Find Patent Forward Citations

Hsu, Tzu-Hsuan. (2010). Method to optimize substrate thickness for image sensor device (U.S. Patent No. 7838325). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7838325

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