The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Jan. 23, 2009
Rimiko Ide, Aichi, JP;
Kenji Noda, Osaka, JP;
Hirofumi Fukumoto, Toyama, JP;
Kenichi Asahi, Toyama, JP;
Naohiko Ujimaru, Hyogo, JP;
Rimiko Ide, Aichi, JP;
Kenji Noda, Osaka, JP;
Hirofumi Fukumoto, Toyama, JP;
Kenichi Asahi, Toyama, JP;
Naohiko Ujimaru, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
In a focus measurement method and a method of manufacturing a semiconductor device relating to the present invention, a focus value is obtained by using a fluctuation where shrinkage of a resist pattern by an electron beam irradiation depends upon the focus value. In the case of obtaining the focus value, the shrinkage of the resist pattern for a focus measurement formed by exposure to be subject for a focus value measurement is measured. The focus value corresponding to the shrinkage is obtained from the pre-obtained focal dependency of the shrinkage. A focal shift length can be defined from a difference between the focus value and a predetermined best focus value.