The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Apr. 09, 2009
Han-sung Chen, Hsinchu, TW;
Su-chueh Lo, Miaoli, TW;
Chun-hsiung Hung, Hsinchu, TW;
Nai-ping Kuo, Hsinchu, TW;
Ming-chih Hsieh, Taipei, TW;
Wen-pin Tsai, Hsinchu, TW;
Han-Sung Chen, Hsinchu, TW;
Su-Chueh Lo, Miaoli, TW;
Chun-Hsiung Hung, Hsinchu, TW;
Nai-Ping Kuo, Hsinchu, TW;
Ming-Chih Hsieh, Taipei, TW;
Wen-Pin Tsai, Hsinchu, TW;
Abstract
Some embodiments of the present invention provide a memory device including a first memory array having a first word line and a comparator circuit having a first terminal coupled to a reference voltage and a second terminal coupled to a first switch selectively coupling the first word line to a power source or the second terminal. In an embodiment, the reference voltage is selected for identifying a leakage condition associated with the first word line. In another embodiment, the first switch is configured to couple the first word line to the power source for a first predetermined period of time to allow charging of the first word line. In another embodiment, the first switch is configured to couple the first word line to the second terminal of the comparator for at least a second predetermined period of time.