The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 2010

Filed:

Sep. 29, 2009
Applicants:

Deok-sin Kil, Kyoungki-do, KR;

Han-sang Song, Kyoungki-do, KR;

Seung-jin Yeom, Kyoungki-do, KR;

Ki-seon Park, Kyoungki-do, KR;

Jae-sung Roh, Kyoungki-do, KR;

Inventors:

Deok-Sin Kil, Kyoungki-do, KR;

Han-Sang Song, Kyoungki-do, KR;

Seung-Jin Yeom, Kyoungki-do, KR;

Ki-Seon Park, Kyoungki-do, KR;

Jae-Sung Roh, Kyoungki-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A capacitor includes a lower electrode, a dielectric structure over the lower electrode, the dielectric structure including at least one crystallized zirconium oxide (ZrO) layer and at least one amorphous aluminum oxide (AlO) layer, and an upper electrode formed over the dielectric structure. A method for fabricating a capacitor includes forming a lower electrode over a certain structure, forming a dielectric structure including at least one crystallized zirconium oxide (ZrO) layer and at least one amorphous aluminum oxide (AlO) layer over the lower electrode, and forming an upper electrode over the dielectric structure.


Find Patent Forward Citations

Loading…