The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Jan. 20, 2009
Kamal Tabatabaie, Sharon, MA (US);
Michael S. Davis, Ipswich, MA (US);
Jeffrey R. Laroche, Lowell, MA (US);
Valery S. Kaper, Winchester, MA (US);
John P. Bettencourt, Danvers, MA (US);
Kamal Tabatabaie, Sharon, MA (US);
Michael S. Davis, Ipswich, MA (US);
Jeffrey R. LaRoche, Lowell, MA (US);
Valery S. Kaper, Winchester, MA (US);
John P. Bettencourt, Danvers, MA (US);
Raytheon Company, Waltham, MA (US);
Abstract
A semiconductor structure having a substrate, a seed layer over the substrate; a silicon layer disposed on the seed layer; a transistor device in the silicon layer; a III-V device disposed on the seed layer; and a plurality of electrical contacts, each one of the electrical contacts having a layer of TiN or TaN and a layer of copper or aluminum on the layer of TaN or TiN, one of the electrical contacts being electrically connected to the transistor and another one of the electrical contacts being electrically connected to the III-V device.